FQPF5N90, MOSFET N-Channel 900V 3A

PartNumber: FQPF5N90
Ном. номер: 8093242550
Производитель: Fairchild Semiconductor
FQPF5N90, MOSFET N-Channel 900V 3A
Доступно на заказ 15 шт. Отгрузка со склада в Москве 7 недель.
250 × = 250
от 10 шт. — 120 руб.

Описание

QFET® N-Channel MOSFET, up to 5A, Fairchild Semiconductor
Fairchild Semiconductor's new QFET® planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control.
They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.

MOSFET Transistors, Fairchild Semiconductor
Fairchild offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
Fairchild MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Полупроводники / Дискретные компоненты / МОП-транзисторы (MOSFETs) /
Fairchild FQPF5N90 N-channel MOSFET Transistor, 3 A, 900 V, 3-pin TO-220F

Технические параметры

Pin Count
3
ширина
4.7mm
Typical Input Capacitance @ Vds
1200 pF@ 25 V
Typical Gate Charge @ Vgs
31 nC@ 10 V
Максимальная рассеиваемая мощность
51 W
Maximum Drain Source Voltage
900 V
размеры
10.16 x 4.7 x 9.19mm
Maximum Continuous Drain Current
3 A
Maximum Drain Source Resistance
2.3 Ω
тип упаковки
TO-220F
максимальная рабочая температура
+150 °C
высота
9.19mm
длина
10.16mm
Channel Type
N
Channel Mode
Enhancement
Minimum Gate Threshold Voltage
3V
конфигурация
Single
Minimum Operating Temperature
-55 °C
Typical Turn-On Delay Time
28 ns
Maximum Gate Source Voltage
±30 V
тип монтажа
Through Hole
Number of Elements per Chip
1
разрешение
Power MOSFET
Typical Turn-Off Delay Time
65 ns

Дополнительная информация

Trans MOSFET N-CH 900V 3A 3-Pin TO-220F