FQPF6N80C, MOSFET N-Channel 800V 5.5

PartNumber: FQPF6N80C
Ном. номер: 8028239139
Производитель: Fairchild Semiconductor
FQPF6N80C, MOSFET N-Channel 800V 5.5
Доступно на заказ 20 шт. Отгрузка со склада в Москве 7 недель.
170 × = 850
Количество товаров должно быть кратно 5 шт.

Описание

QFET® N-Channel MOSFET, up to 5A, Fairchild Semiconductor
Fairchild Semiconductor's new QFET® planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control.
They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.

MOSFET Transistors, Fairchild Semiconductor
Fairchild offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
Fairchild MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Полупроводники / Дискретные компоненты / МОП-транзисторы (MOSFETs) /
Fairchild FQPF6N80C N-channel MOSFET Transistor, 5.5 A, 800 V, 3-pin TO-220F

Технические параметры

Typical Turn-Off Delay Time
47 ns
Максимальная рассеиваемая мощность
51 W
Minimum Gate Threshold Voltage
3V
Typical Gate Charge @ Vgs
21 nC@ 10 V
Typical Input Capacitance @ Vds
1010 pF@ 25 V
Minimum Operating Temperature
-55 °C
Maximum Gate Source Voltage
±30 V
тип монтажа
Through Hole
Number of Elements per Chip
1
разрешение
Power MOSFET
размеры
10.16 x 4.7 x 9.19mm
ширина
4.7mm
высота
9.19mm
длина
10.16mm
Maximum Drain Source Voltage
800 V
тип упаковки
TO-220F
Pin Count
3
Typical Turn-On Delay Time
26 ns
Maximum Continuous Drain Current
5.5 A
конфигурация
Single
Channel Type
N
Channel Mode
Enhancement
Maximum Drain Source Resistance
2.5 Ω
максимальная рабочая температура
+150 °C

Дополнительная информация

Trans MOSFET N-CH 800V 5.5A 3-Pin TO-220