FQU1N60CTU, MOSFET N-Channel 600V 1A

PartNumber: FQU1N60CTU
Ном. номер: 8045357347
Производитель: Fairchild Semiconductor
FQU1N60CTU, MOSFET N-Channel 600V 1A
Доступно на заказ более 60 шт. Отгрузка со склада в Москве 6 недель.
76 × = 380
Количество товаров должно быть кратно 5 шт.
от 25 шт. — 43 руб.
от 100 шт. — 24.70 руб.

Описание

QFET® N-Channel MOSFET, up to 5A, Fairchild Semiconductor
Fairchild Semiconductor's new QFET® planar MOSFETs use advanced, proprietary technology to offer best-in-class operating performance for a wide range of applications, including power supplies, PFC (Power Factor Correction), DC-DC Converters, Plasma Display Panels (PDP), lighting ballasts, and motion control.
They offer reduced on-state loss by lowering on-resistance (RDS(on)), and reduced switching loss by lowering gate charge (Qg) and output capacitance (Coss). By using advanced QFET® process technology, Fairchild can offer an improved figure of merit (FOM) over competing planar MOSFET devices.

MOSFET Transistors, Fairchild Semiconductor
Fairchild offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
Fairchild MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Полупроводники / Дискретные компоненты / МОП-транзисторы (MOSFETs) /
Fairchild FQU1N60CTU N-channel MOSFET Transistor, 1 A, 600 V, 3-pin IPAK

Технические параметры

Максимальная рассеиваемая мощность
2.5 W
Typical Input Capacitance @ Vds
130 pF@ 25 V
Typical Gate Charge @ Vgs
4.8 nC@ 10 V
Maximum Gate Source Voltage
±30 V
Typical Turn-Off Delay Time
13 ns
тип упаковки
IPAK
Number of Elements per Chip
1
разрешение
Power MOSFET
Minimum Gate Threshold Voltage
2V
Minimum Operating Temperature
-55 °C
тип монтажа
Through Hole
ширина
2.3mm
Typical Turn-On Delay Time
7 ns
длина
6.6mm
Pin Count
3
Channel Type
N
Channel Mode
Enhancement
размеры
6.6 x 2.3 x 6.1mm
Maximum Drain Source Voltage
600 V
Maximum Continuous Drain Current
1 A
максимальная рабочая температура
+150 °C
конфигурация
Single
высота
6.1mm
Maximum Drain Source Resistance
11.5 Ω

Дополнительная информация

Trans MOSFET N-CH 600V 1A 3-Pin IPAK