FS25R12W1T4, IGBT Modules N-CH 1.2KV 45A
11 000 руб.
от 10 шт. —
9 370 руб.
от 24 шт. —
8 190 руб.
Добавить в корзину 1 шт.
на сумму 11 000 руб.
Описание
Semiconductors\Discrete Semiconductors\Transistors\IGBT Modules
Технические параметры
| Brand: | Infineon Technologies |
| Collector- Emitter Voltage VCEO Max: | 1.2 kV |
| Collector-Emitter Saturation Voltage: | 1.85 V |
| Configuration: | 6-Pack |
| Continuous Collector Current at 25 C: | 45 A |
| Factory Pack Quantity: | 24 |
| Gate-Emitter Leakage Current: | 400 nA |
| Manufacturer: | Infineon |
| Maximum Gate Emitter Voltage: | 20 V |
| Maximum Operating Temperature: | +150 C |
| Minimum Operating Temperature: | -40 C |
| Mounting Style: | Chassis Mount |
| Package / Case: | EASY1B |
| Packaging: | Tray |
| Part # Aliases: | SP000255353 FS25R12W1T4BOMA1 |
| Pd - Power Dissipation: | 205 W |
| Product Category: | IGBT Modules |
| Product Type: | IGBT Modules |
| Product: | IGBT Silicon Modules |
| Subcategory: | IGBTs |
| Technology: | Si |
| Вес, г | 24 |
