FS75R12KE3GBOSA1, БТИЗ массив и модульный транзистор, N Канал, 100 А, 1.7 В, 355 Вт, 1.2 кВ, Module
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Описание
The Infineon range of IGBT Modules offer low switching loss for switching up to 60 Khz frequencies. The IGBTs span over a range of power modules like the ECONOPACK packages with collector emitter voltage at 1200V, PrimePACK IGBT half-bridge chopper modules with NTC up to 1600/1700V.
Технические параметры
| Brand: | Infineon Technologies |
| Collector- Emitter Voltage VCEO Max: | 1.2 kV |
| Collector-Emitter Saturation Voltage: | 1.7 V |
| Configuration: | 6-Pack |
| Continuous Collector Current at 25 C: | 105 A |
| Factory Pack Quantity: Factory Pack Quantity: | 10 |
| Gate-Emitter Leakage Current: | 400 nA |
| Manufacturer: | Infineon |
| Maximum Gate Emitter Voltage: | 20 V |
| Maximum Operating Temperature: | +125 C |
| Minimum Operating Temperature: | -40 C |
| Mounting Style: | Chassis Mount |
| Package / Case: | EconoPACK 3B |
| Packaging: | Tray |
| Part # Aliases: | SP000100418 FS75R12KE3GBOSA1 |
| Pd - Power Dissipation: | 355 W |
| Product Category: | IGBT Modules |
| Product Type: | IGBT Modules |
| Product: | IGBT Silicon Modules |
| Series: | IGBT3-E3 |
| Subcategory: | IGBTs |
| Technology: | Si |
| Tradename: | EconoPACK |
| Channel Type | N |
| Configuration | 3 Phase Bridge |
| Maximum Collector Emitter Voltage | 1200 V |
| Maximum Continuous Collector Current | 100 A |
| Maximum Gate Emitter Voltage | ±20V |
| Maximum Operating Temperature | +125 °C |
| Maximum Power Dissipation | 355 W |
| Minimum Operating Temperature | -40 °C |
| Mounting Type | PCB Mount |
| Package Type | ECONO3 |
| Pin Count | 35 |
| Switching Speed | 1MHz |
| Transistor Configuration | 3 Phase |
| Вес, г | 200 |
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