HUF75344P3, MOSFET, Fairchild, HUF753

PartNumber: HUF75344P3
Ном. номер: 8006611063
Производитель: Fairchild Semiconductor
HUF75344P3, MOSFET, Fairchild, HUF753
Доступно на заказ более 20 шт. Отгрузка со склада в Москве 6 недель.
210 × = 1 050
Количество товаров должно быть кратно 5 шт.
от 25 шт. — 150 руб.

Описание

UltraFET® MOSFET, Fairchild Semiconductor
UItraFET® Trench MOSFET combine characteristics that enable benchmark efficiency in power conversion applications. The device is capable of withstanding high energy in the avalanche mode, and the diode exhibits very low reverse recovery time and stored charge. Optimised for efficiency at high frequencies, lowest RDS(on), low ESR, and low total and Miller gate charge.
Applications in high frequency DC to DC converters, switching regulators, motor drivers, low-voltage bus switches, and power management.

MOSFET Transistors, Fairchild Semiconductor
Fairchild offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
Fairchild MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Полупроводники / Дискретные компоненты / МОП-транзисторы (MOSFETs) /
Fairchild HUF75344P3 N-channel MOSFET Transistor, 75 A, 55 V, 3-pin TO-220AB

Технические параметры

ширина
4.7mm
Typical Turn-Off Delay Time
46 ns
Pin Count
3
Максимальная рассеиваемая мощность
285 W
конфигурация
Single
Typical Input Capacitance @ Vds
3200 pF@ 25 V
Number of Elements per Chip
1
разрешение
Power MOSFET
Maximum Gate Source Voltage
±20 V
Minimum Gate Threshold Voltage
2V
Minimum Operating Temperature
-55 °C
размеры
10.67 x 4.7 x 16.3mm
максимальная рабочая температура
+175 °C
тип монтажа
Through Hole
длина
10.67mm
Typical Turn-On Delay Time
187 ns
Typical Gate Charge @ Vgs
175 nC @ V@ 0 → 20
Maximum Drain Source Voltage
55 V
тип упаковки
TO-220AB
Maximum Continuous Drain Current
75 A
Channel Type
N
Channel Mode
Enhancement
Maximum Drain Source Resistance
0.008 Ω
высота
16.3mm

Дополнительная информация

HUF75344G3, HUF75344P3, N-Channel UltraFET ...