IKW30N60H3 (K30H603), Транзистор 600V 60A 187W [TO247-3]

Артикул: IKW30N60H3 (K30H603)
PartNumber: IKW30N60H3FKSA1
Ном. номер: 9000263287
Производитель: Infineon Technologies
Фото 1/2 IKW30N60H3 (K30H603), Транзистор 600V 60A 187W [TO247-3]
Фото 2/2 IKW30N60H3 (K30H603), Транзистор 600V 60A 187W [TO247-3]
Доступно на заказ 216 шт. Отгрузка со склада в Москве 2-3 недели.
370 × = 370
от 25 шт. — 318 руб.
от 100 шт. — 280 руб.

Описание

The IKW30N60H3 is a 600V Discrete IGBT with very soft, fast recovery anti-parallel diode designed specifically to replace planar MOSFETs in applications switching at frequencies below 70kHz. The key feature of this family is a MOSFET-like turn-off switching behaviour and thus leading to low turn off losses. Discrete IGBT is ideal for hard switching applications as well as soft switching applications and other resonant applications.

• Low switching losses for high efficiency
• Fast switching behaviour with low EMI emissions
• Low gate resistor selection possible (down to 5R) whilst maintaining excellent switching behaviour
• Short circuit capability
• Excellent performance
• Low switching and conduction losses

Техническая документация

Дополнительная информация

Datasheet IKW30N60H3 (K30H603) IKW30N60H3FKSA1
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов