IKW40N120H3, Transistor IGBT N-Ch 1200

PartNumber: IKW40N120H3
Ном. номер: 8080635645
Производитель: Infineon Technologies
IKW40N120H3, Transistor IGBT N-Ch 1200
Доступно на заказ более 5 шт. Отгрузка со склада в Москве 6 недель.
890 × = 890
от 25 шт. — 510 руб.

Описание

IGBT Discretes, Infineon
Infineon range of discrete IGBT's offer different technologies such as NPT, N-Channel TRENCHSTOP TM and Fieldstop. They can be used in many applications that may require hard switching and soft switching. This includes Industrial drives, UPS, Inverters, home appliances and Induction cooking. Some devices may have an anti-parallel diode or with maybe a monolithically integrated diode.

IGBT Discretes & Modules, Infineon
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Полупроводники / Дискретные компоненты / IGBT транзисторы /
Infineon IKW40N120H3, IGBT Transistor, 80 A 1200 V, 3-pin TO-247

Технические параметры

Channel Type
N
конфигурация
Single
Dimensions
16.03 x 5.16 x 21.1mm
Maximum Collector Emitter Voltage
1200 V
Maximum Continuous Collector Current
80 A
Maximum Gate Emitter Voltage
±20V
Maximum Operating Temperature
+175 °C
Максимальная рассеиваемая мощность
483 W
Minimum Operating Temperature
-40 °C
Package Type
TO-247
Pin Count
3
Width
5.16mm
высота
21.1mm
длина
16.03mm
тип монтажа
Through Hole

Дополнительная информация

Datasheet