IKW40T120FKSA1, БТИЗ транзистор, универсальный, 75 А, 2.3 В, 270 Вт, 1.2 кВ, TO-247, 3 вывод(-ов)

PartNumber: IKW40T120FKSA1
Ном. номер: 8052119226
Производитель: Infineon Technologies
IKW40T120FKSA1, БТИЗ транзистор ...
Доступно на заказ 205 шт. Отгрузка со склада в Москве 7 недель.
760 × = 760
от 25 шт. — 709 руб.
от 100 шт. — 642 руб.


The IKW40T120 is a 1200V Discrete IGBT with very soft, fast recovery anti-parallel emitter controlled diode. TRENCHSTOP™ IGBT technology leads to significant improvement of static as well as dynamic performance of the device due to combination of trench top-cell and filed stop concept. Combination of IGBT with soft recovery emitter controlled diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses. Discrete IGBT is ideal for hard switching applications as well as soft switching applications and other resonant applications.

• Lowest Vce (sat) drop for lower conduction losses
• Low switching losses
• Easy to parallel switching capability due to positive temperature coefficient in Vce (sat)
• High ruggedness, temperature stable behaviour
• Low EMI emissions
• Low gate charge
• Very tight parameter distribution
• Highest efficiency
• Low conduction and switching losses

Полупроводники - Дискретные\Транзисторы\БТИЗ Одиночные
Код: 1471749

Технические параметры

DC Ток Коллектора
Напряжение Насыщения Коллектор-Эмиттер Vce(on)
Рассеиваемая Мощность
Напряжение Коллектор-Эмиттер
Стиль Корпуса Транзистора
Количество Выводов
Максимальная Рабочая Температура

Дополнительная информация

Datasheet IKW40T120FKSA1