IKW75N60T, БТИЗ транзистор, универсальный, 80 А, 2 В, 428 Вт, 600 В, TO-247, 3 вывод(-ов)

PartNumber: IKW75N60T
Ном. номер: 8097651839
Производитель: Infineon Technologies
IKW75N60T, БТИЗ транзистор, универсальный ...
Доступно на заказ 260 шт. Отгрузка со склада в Москве 2-4 недели.
1 600 × = 1 600
от 25 шт. — 890 руб.
от 100 шт. — 496.80 руб.


The IKW75N60T is a 600V Discrete IGBT with very soft, fast recovery anti-parallel emitter controlled diode. TRENCHSTOP™ IGBT technology leads to significant improvement of static as well as dynamic performance of the device due to combination of trench top-cell and filed stop concept. Combination of IGBT with soft recovery emitter controlled diode further minimizes the turn-on losses. The highest efficiency is reached due to the best compromise between switching and conduction losses. Discrete IGBT is ideal for hard switching applications as well as soft switching applications and other resonant applications.

• Lowest Vce (sat) drop for lower conduction losses
• Low switching losses
• Easy to parallel switching capability due to positive temperature coefficient in Vce (sat)
• High ruggedness, temperature stable behaviour
• Low EMI emissions
• Low gate charge
• Very tight parameter distribution
• Highest efficiency
• Low conduction and switching losses

Полупроводники - Дискретные\Транзисторы
Код: 1471751

Технические параметры

DC Ток Коллектора
Напряжение Насыщения Коллектор-Эмиттер Vce(on)
Рассеиваемая Мощность
Напряжение Коллектор-Эмиттер
Стиль Корпуса Транзистора
Количество Выводов
Максимальная Рабочая Температура

Дополнительная информация

Datasheet IKW75N60T