IPD70N10S3L-12, MOSFET N-Ch 100V 70A Opti

PartNumber: IPD70N10S3L-12
Ном. номер: 8051275441
Производитель: Infineon Technologies
IPD70N10S3L-12, MOSFET N-Ch 100V 70A Opti
Доступно на заказ более 20 шт. Отгрузка со склада в Москве 6 недель.
180 × = 900
Количество товаров должно быть кратно 5 шт.
от 10 шт. — 110 руб.
от 25 шт. — 94.80 руб.

Описание

Infineon OptiMOS™T Power MOSFETs
OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.

N-channel - Enhancement mode
Automotive AEC Q101 qualified
MSL1 up to 260°C peak reflow
175°C operating temperature
Green product (RoHS compliant)

MOSFET Transistors, Infineon
Infineon's large and comprehensive portfolio of MOSFET devices includes the OptiMOS™ and CoolMOS™ families. These products deliver best-in-class performance from the latest generation of state-of-the-art power MOSFETs

Полупроводники / Дискретные компоненты / МОП-транзисторы (MOSFETs) /
Infineon IPD70N10S3L-12 N-channel MOSFET Transistor, 70 A, 100 V, 3-pin TO-252

Технические параметры

разрешение
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
размеры
6.5 x 6.22 x 2.3mm
высота
2.3mm
длина
6.5mm
Maximum Continuous Drain Current
70 A
Maximum Drain Source Resistance
0.0152 Ω
Maximum Drain Source Voltage
100 V
Maximum Gate Source Voltage
±20 V
максимальная рабочая температура
+175 °C
Максимальная рассеиваемая мощность
125 W
Minimum Operating Temperature
-55 °C
тип монтажа
Surface Mount
Number of Elements per Chip
1
тип упаковки
TO-252
Pin Count
3
Typical Gate Charge @ Vgs
59 nC@ 10 V
Typical Input Capacitance @ Vds
4270 pF@ 25 V
Typical Turn-Off Delay Time
35 ns
Typical Turn-On Delay Time
12 ns
ширина
6.22mm
Maximum Gate Threshold Voltage
2.4V
Minimum Gate Threshold Voltage
1.2V

Дополнительная информация

IPD70N10S3L-12, OptiMOS-T Power-Transistor