IPP072N10N3 G, MOSFET N-Channel 100V 80A

PartNumber: IPP072N10N3 G
Ном. номер: 8057137747
Производитель: Infineon Technologies
IPP072N10N3 G, MOSFET N-Channel 100V 80A
Доступно на заказ 18 шт. Отгрузка со склада в Москве 7 недель.
230 × = 460
Количество товаров должно быть кратно 2 шт.

Описание

Infineon OptiMOS™3 Power MOSFETs, 60V and over
OptiMOS™ products are available in high performance packages to tackle the most challenging applications giving full flexibility in limited spaces. These Infineon products are designed to meet and exceed the energy efficiency and power density requirements of the sharpened next generation voltage regulation standards in computing applications.

Fast switching MOSFET for SMPS
Optimized technology for DC/DC converters
Qualified according to JEDEC1) for target applications
N-channel, logic level
Excellent gate charge x R DS(on) product (FOM)
Very low on-resistance R DS(on)
Pb-free plating

MOSFET Transistors, Infineon
Infineon's large and comprehensive portfolio of MOSFET devices includes the OptiMOS™ and CoolMOS™ families. These products deliver best-in-class performance from the latest generation of state-of-the-art power MOSFETs

Полупроводники / Дискретные компоненты / МОП-транзисторы (MOSFETs) /
Infineon IPP072N10N3 G N-channel MOSFET Transistor, 80 A, 100 V, 3-pin TO-220

Технические параметры

разрешение
High Frequency Switching, Synchronous Rectification
Channel Mode
Enhancement
Channel Type
N
конфигурация
Single
размеры
10.36 x 15.95 x 4.57mm
высота
4.57mm
длина
10.36mm
Maximum Continuous Drain Current
80 A
Maximum Drain Source Resistance
0.0072 Ω
Maximum Drain Source Voltage
100 V
Maximum Gate Source Voltage
±20 V
максимальная рабочая температура
+175 °C
Максимальная рассеиваемая мощность
150 W
Minimum Operating Temperature
-55 °C
тип монтажа
Through Hole
Number of Elements per Chip
1
тип упаковки
TO-220
Pin Count
3
Typical Gate Charge @ Vgs
51 nC@ 0 → 10 V
Typical Input Capacitance @ Vds
3690 pF@ 50 V
Typical Turn-Off Delay Time
37 ns
Typical Turn-On Delay Time
19 ns
ширина
15.95mm
Maximum Gate Threshold Voltage
3.5V
Minimum Gate Threshold Voltage
2V

Дополнительная информация

MOSFET N-ch 100V 80A OptiMOS3 TO220