IRF2805SPBF, Nкан 55В 135А D2Pak
The IRF2805SPBF is a HEXFET® single N-channel Power MOSFET utilizes the latest processing techniques to achieve extremely low ON-resistance per silicon area. It features 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. This combination makes the design an extremely efficient and reliable device for use in a wide variety of applications.
• Advanced process technology
• Repetitive avalanche allowed up to Tjmax