IRF2807ZSPBF, МОП-транзистор, N Канал, 89 А, 75 В, 9.4 мОм, 10 В, 4 В
The IRF2807ZSPBF is a HEXFET® single N-channel Power MOSFET utilizes the latest processing techniques to achieve extremely low ON-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of applications. It is also suitable for AC-to-DC, consumer full-bridge, full-bridge and push-pull applications.
• Advanced process technology
• Ultra-low ON-resistance
• Dynamic dV/dt rating
• Repetitive avalanche allowed up to Tjmax
Полупроводники - Дискретные\Транзисторы\МОП-транзисторы