IRF3205STRLPBF, МОП-транзистор, N Канал, 110 А, 55 В, 0.008 Ом, 10 В, 4 В
The IRF3205STRLPBF is a HEXFET® single N-channel Power MOSFET utilizes advanced processing techniques to achieve extremely low ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design, provides an extremely efficient and reliable operation. The surface-mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible ON-resistance in any existing surface-mount package. It is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2W in a typical surface-mount application.
• Advanced process technology
• Dynamic dV/dt rating
• Fully avalanche rating
Полупроводники - Дискретные\Транзисторы\МОП-транзисторы