IRF3808PBF, Транзистор, N-канал 75В 140А авто [TO-220AB]
The IRF3808PBF is a HEXFET® single N-channel advanced planar stripe Power MOSFET utilizes the latest processing techniques to achieve extremely low ON-resistance per silicon area. It features 175°C junction operating temperature, low junction-to-case, fast switching speed and improved repetitive avalanche rating. This combination makes the design an extremely efficient and reliable choice for use in a wide variety of applications.
• Advanced process technology
• Dynamic dV/dt rating
• Repetitive avalanche allowed up to Tjmax