IRF5210LPBF, Транзистор, HEXFET, -40А,-100В 0.06Ом [TO262]
The IRF5210LPBF is a HEXFET® single P-channel Power MOSFET offers of this design is a 150°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of other applications.
• Advanced process technology
• Ultra-low ON-resistance
• Fast switching
• Repetitive avalanche allowed up to Tjmax