IRF7317TRPBF, Двойной МОП-транзистор, N и P Канал, 6.6 А, 20 В, 0.023 Ом, 4.5 В, 700 мВ
The IRF7317TRPBF is a dual N/P-channel MOSFET utilizes advanced processing techniques to achieve the lowest possible ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device. The HEXFET Power MOSFET is extremely efficient device for use in a wide variety of applications. The SO-8 has been modified through a customized lead-frame for enhanced thermal characteristics and dual-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space.
• Generation V technology
• Ultra low ON-resistance
• Surface-mount device
• Fully avalanche rated
Полупроводники - Дискретные\Транзисторы\МОП-транзисторы