IRF7343TRPBF, Транзистор N+P 55V 3.4A [8-SOIC]

Артикул: IRF7343TRPBF
Ном. номер: 9000072123
Производитель: International Rectifier
Фото 1/4 IRF7343TRPBF, Транзистор N+P 55V 3.4A [8-SOIC]
Фото 2/4 IRF7343TRPBF, Транзистор N+P 55V 3.4A [8-SOIC]Фото 3/4 IRF7343TRPBF, Транзистор N+P 55V 3.4A [8-SOIC]Фото 4/4 IRF7343TRPBF, Транзистор N+P 55V 3.4A [8-SOIC]
Есть в наличии более 80 шт. Отгрузка со склада в Москве 3 рабочих дня.
59 × = 59
от 90 шт. — 21 руб.
от 900 шт. — 17.76 руб.

Описание

The IRF7343TRPBF is a dual N/P-channel MOSFET utilizes advanced processing techniques to achieve the lowest possible ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device. The HEXFET Power MOSFET is extremely efficient device for use in a wide variety of applications. The SO-8 has been modified through a customized lead-frame for enhanced thermal characteristics and dual-die capability making it ideal in a variety of power applications. With these improvements, multiple devices can be used in an application with dramatically reduced board space.

• Generation V technology
• Ultra low ON-resistance
• Surface-mount device
• Fully avalanche rated

Техническая документация

irf7343pbf
pdf, 219 КБ

Дополнительная информация

Datasheet IRF7343TRPBF
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов