IRFB3006GPBF, MOSFET N-Ch 60V 270A HEXF

PartNumber: IRFB3006GPBF
Ном. номер: 8097707235
Производитель: International Rectifier
IRFB3006GPBF, MOSFET N-Ch 60V 270A HEXF
Доступно на заказ более 10 шт. Отгрузка со склада в Москве 6 недель.
400 × = 800
Количество товаров должно быть кратно 2 шт.

Описание

N-Channel Power MOSFET over 100A, International Rectifier
The International Rectifier range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages. And form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, International Rectifier
International Rectifier comprehensive portfolio of rugged single and dual N-channel and P-channel devices offer fast switching speeds and addresses a wide variety of power requirements. Applications range from ac-dc and DC-DC power supplies to audio and consumer electronics and from motor control to lighting and home appliances.

Полупроводники / Дискретные компоненты / МОП-транзисторы (MOSFETs) /
International Rectifier IRFB3006GPBF N-channel MOSFET Module, 270 A, 60 V, 3-Pin TO-220AB

Технические параметры

разрешение
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
конфигурация
Single
Dimensions
10.67 x 4.83 x 16.51mm
Maximum Continuous Drain Current
270 A
Maximum Drain Source Resistance
0.0025 Ω
Maximum Drain Source Voltage
60 V
Maximum Gate Source Voltage
±20 V
Maximum Operating Temperature
+175 °C
Максимальная рассеиваемая мощность
375 W
Minimum Operating Temperature
-55 °C
Number of Elements per Chip
1
Package Type
TO-220AB
Pin Count
3
Typical Gate Charge @ Vgs
200 nC@ 10 V
Typical Input Capacitance @ Vds
8970 pF@ 25 V
Typical Turn-Off Delay Time
118 ns
Typical Turn-On Delay Time
16 ns
Width
4.83mm
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V
высота
16.51mm
Length
10.67mm
Mounting Type
Through Hole

Дополнительная информация

Datasheet
IRFB3006GPbF, HEXFET Power MOSFET