IRFB4228PBF, MOSFET N-Channel 150V 83A

PartNumber: IRFB4228PBF
Ном. номер: 8121286485
Производитель: International Rectifier
IRFB4228PBF, MOSFET N-Channel 150V 83A
Доступно на заказ более 9 шт. Отгрузка со склада в Москве 6 недель.
530 × = 530
от 5 шт. — 340 руб.
от 10 шт. — 237 руб.

Описание

N-Channel Power MOSFET 80A to 99A, International Rectifier
International Rectifier's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, International Rectifier
International Rectifier's comprehensive portfolio of rugged single- and dual- N-channel and P-channel devices offers fast switching speeds and addresses a wide variety of power requirements in applications ranging from AC-DC and DC-DC power supplies to audio and consumer electronics and from motor control to lighting and home appliances.

Полупроводники / Дискретные компоненты / МОП-транзисторы (MOSFETs) /
International Rectifier IRFB4228PBF N-channel MOSFET Transistor, 83 A, 150 V, 3-pin TO-220AB

Технические параметры

разрешение
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
конфигурация
Single
высота
8.77mm
Maximum Continuous Drain Current
83 A
Maximum Drain Source Resistance
0.015 Ω
Maximum Drain Source Voltage
150 V
Maximum Gate Source Voltage
±30 V
максимальная рабочая температура
+175 °C
Максимальная рассеиваемая мощность
330 W
Minimum Operating Temperature
-40 °C
тип монтажа
Through Hole
Number of Elements per Chip
1
тип упаковки
TO-220AB
Pin Count
3
Typical Gate Charge @ Vgs
72 nC@ 10 V
Typical Input Capacitance @ Vds
4530 pF@ 25 V
Maximum Gate Threshold Voltage
5V
Minimum Gate Threshold Voltage
3V

Дополнительная информация

MOSFET N HEXFET PDP Sw. 150V 83A TO220AB Data ...