IRFIZ44NPBF, MOSFET N-Channel 55V 31A

PartNumber: IRFIZ44NPBF
Ном. номер: 8059966093
Производитель: International Rectifier
IRFIZ44NPBF, MOSFET N-Channel 55V 31A
Доступно на заказ 19 шт. Отгрузка со склада в Москве 7 недель.
220 × = 220
от 10 шт. — 110 руб.

Описание

N-Channel Power MOSFET 30A to 39A, International Rectifier
International Rectifier's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, International Rectifier
International Rectifier's comprehensive portfolio of rugged single- and dual- N-channel and P-channel devices offers fast switching speeds and addresses a wide variety of power requirements in applications ranging from AC-DC and DC-DC power supplies to audio and consumer electronics and from motor control to lighting and home appliances.

Полупроводники / Дискретные компоненты / МОП-транзисторы (MOSFETs) /
International Rectifier IRFIZ44NPBF N-channel MOSFET Transistor, 31 A, 55 V, 3-pin TO-220

Технические параметры

разрешение
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
конфигурация
Single
размеры
10.75 x 4.83 x 9.8mm
высота
9.8mm
длина
10.75mm
Maximum Continuous Drain Current
31 A
Maximum Drain Source Resistance
0.024 Ω
Maximum Drain Source Voltage
55 V
Maximum Gate Source Voltage
±20 V
максимальная рабочая температура
+175 °C
Максимальная рассеиваемая мощность
45 W
Minimum Operating Temperature
-55 °C
тип монтажа
Through Hole
Number of Elements per Chip
1
тип упаковки
TO-220
Pin Count
3
Typical Gate Charge @ Vgs
65 nC@ 10 V
Typical Input Capacitance @ Vds
1300 pF@ 25 V
Typical Turn-Off Delay Time
47 ns
Typical Turn-On Delay Time
7.3 ns
ширина
4.83mm
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V

Дополнительная информация

IRFIZ44NPBF Data Sheet