IRFP044NPBF, MOSFET N-Channel 55V 53A

PartNumber: IRFP044NPBF
Ном. номер: 8106669110
Производитель: International Rectifier
IRFP044NPBF, MOSFET N-Channel 55V 53A
Доступно на заказ более 30 шт. Отгрузка со склада в Москве 7 недель.
160 × = 160
от 10 шт. — 86 руб.
от 20 шт. — 60 руб.

Описание

N-Channel Power MOSFET 50A to 59A, International Rectifier
International Rectifier's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, International Rectifier
International Rectifier's comprehensive portfolio of rugged single- and dual- N-channel and P-channel devices offers fast switching speeds and addresses a wide variety of power requirements in applications ranging from AC-DC and DC-DC power supplies to audio and consumer electronics and from motor control to lighting and home appliances.

Полупроводники / Дискретные компоненты / МОП-транзисторы (MOSFETs) /
International Rectifier IRFP044NPBF N-channel MOSFET Transistor, 53 A, 55 V, 3-pin TO-247AC

Технические параметры

разрешение
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
конфигурация
Single
размеры
15.9 x 5.3 x 20.3mm
высота
20.3mm
длина
15.9mm
Maximum Continuous Drain Current
53 A
Maximum Drain Source Resistance
0.02 Ω
Maximum Drain Source Voltage
55 V
Maximum Gate Source Voltage
±20 V
максимальная рабочая температура
+175 °C
Максимальная рассеиваемая мощность
120 W
Minimum Operating Temperature
-55 °C
тип монтажа
Through Hole
Number of Elements per Chip
1
тип упаковки
TO-247AC
Pin Count
3
Typical Gate Charge @ Vgs
61 nC@ 10 V
Typical Input Capacitance @ Vds
1500 pF@ 25 V
Typical Turn-Off Delay Time
43 ns
Typical Turn-On Delay Time
12 ns
ширина
5.3mm
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V

Дополнительная информация

IRFP044NPBF Data Sheet