IRFR1205PBF, Транзистор, N-канал 55В 37А [D-PAK]
The IRFR1205PBF is a HEXFET® fifth generation single N-channel Power MOSFET utilizes advanced processing techniques to achieve the lowest possible ON-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design, provides an extremely efficient device for use in a wide variety of applications. It is designed for surface-mounting using vapour phase, infrared or wave soldering techniques. Power dissipation level up to 1.5W is possible in typical surface-mount applications.
• Fully avalanche rating
• Low static drain-to-source ON-resistance
• Dynamic dV/dt rating