IRFZ34NSPBF, MOSFET N-Channel 55V 29A

PartNumber: IRFZ34NSPBF
Ном. номер: 8029541077
Производитель: International Rectifier
IRFZ34NSPBF, MOSFET N-Channel 55V 29A
Доступно на заказ более 20 шт. Отгрузка со склада в Москве 7 недель.
230 × = 230
от 25 шт. — 110 руб.
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Описание

N-Channel Power MOSFET 20A to 29A, International Rectifier
International Rectifier's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, International Rectifier
International Rectifier's comprehensive portfolio of rugged single- and dual- N-channel and P-channel devices offers fast switching speeds and addresses a wide variety of power requirements in applications ranging from AC-DC and DC-DC power supplies to audio and consumer electronics and from motor control to lighting and home appliances.

Полупроводники / Дискретные компоненты / МОП-транзисторы (MOSFETs) /
International Rectifier IRFZ34NSPBF N-channel MOSFET Transistor, 29 A, 55 V, 3-pin D2PAK

Технические параметры

разрешение
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
конфигурация
Single
размеры
10.67 x 9.65 x 4.83mm
высота
4.83mm
длина
10.67mm
Maximum Continuous Drain Current
29 A
Maximum Drain Source Resistance
0.04 Ω
Maximum Drain Source Voltage
55 V
Maximum Gate Source Voltage
±20 V
максимальная рабочая температура
+175 °C
Максимальная рассеиваемая мощность
3.8 W
Minimum Operating Temperature
-55 °C
тип монтажа
Surface Mount
Number of Elements per Chip
1
тип упаковки
D2PAK
Pin Count
3
Typical Gate Charge @ Vgs
34 nC@ 10 V
Typical Input Capacitance @ Vds
700 pF@ 25 V
Typical Turn-Off Delay Time
31 ns
Typical Turn-On Delay Time
7 ns
ширина
9.65mm
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V

Дополнительная информация

IRFZ34NSPBF Data Sheet