IRFZ44NLPBF, MOSFET N-Channel 55V 49A

PartNumber: IRFZ44NLPBF
Ном. номер: 8058164434
Производитель: International Rectifier
IRFZ44NLPBF, MOSFET N-Channel 55V 49A
Доступно на заказ 5 шт. Отгрузка со склада в Москве 7 недель.
160 × = 160

Описание

N-Channel Power MOSFET 40A to 49A, International Rectifier
International Rectifier's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, International Rectifier
International Rectifier's comprehensive portfolio of rugged single- and dual- N-channel and P-channel devices offers fast switching speeds and addresses a wide variety of power requirements in applications ranging from AC-DC and DC-DC power supplies to audio and consumer electronics and from motor control to lighting and home appliances.

Полупроводники / Дискретные компоненты / МОП-транзисторы (MOSFETs) /
International Rectifier IRFZ44NLPBF N-channel MOSFET Transistor, 49 A, 55 V, 3-pin TO-262

Технические параметры

разрешение
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
конфигурация
Single
размеры
10.54 x 4.69 x 10.54mm
высота
10.54mm
длина
10.54mm
Maximum Continuous Drain Current
49 A
Maximum Drain Source Resistance
0.0175 Ω
Maximum Drain Source Voltage
55 V
Maximum Gate Source Voltage
±20 V
максимальная рабочая температура
+175 °C
Максимальная рассеиваемая мощность
3.8 W
Minimum Operating Temperature
-55 °C
тип монтажа
Through Hole
Number of Elements per Chip
1
тип упаковки
TO-262
Pin Count
3
Typical Gate Charge @ Vgs
63 nC@ 10 V
Typical Input Capacitance @ Vds
1470 pF@ 25 V
Typical Turn-Off Delay Time
44 ns
Typical Turn-On Delay Time
12 ns
ширина
4.69mm
Maximum Gate Threshold Voltage
4V
Minimum Gate Threshold Voltage
2V

Дополнительная информация

IRFZ44NLPBF Data Sheet