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IRG4BC20KDPBF

Ном. номер: 5754804728
Производитель: International Rectifier
IRG4BC20KDPBF
Доступно на заказ более 10 шт. Отгрузка со склада в Москве 7 недель.
400 × = 400
от 25 шт. — 200 руб.
от 100 шт. — 140 руб.

Описание

Co-Pack IGBT up to 20A, International Rectifier
Isolated Gate Bipolar Transistors (IGBT) from International Semiconductor provide the iser with a comprehensive range of options to ensure your appplication is covered. High effiency ratings enable this range of IGBTs to be used in a wide variety of applications and can support various switching frequencies thanks to low switching losses.

IGBT co-packaged with ultrafast soft recovery anti-parallel diode for use in bridge configurations

IGBT (Insulated-Gate Bipolar Transistor), International Rectifier
International Rectifier offers an extensive IGBT portfolio ranging from 300V to 1200V based on various technologies that minimize switching and conduction losses to increase efficiency, reduce thermal problems and improve power density. The company also offers a broad range of IGBT die designed specifically for medium- to high-power modules. For modules that demand the highest reliability, solderable front metal (SFM) die can be employed to eliminate bond wires allowing dual sided cooling for improved thermal performance, reliability and efficiency.

Single IGBT, International Rectifier

Offering switching speeds up to 150kHz, IR's discrete IGBTs are available for hard- and soft-switching applications. This comprehensive range offers reduced power dissipation and improved power density and includes DPAK, D2PAK, TO-220, TO-247, TO-262 and Super TO-247 package options.

Co-Pack IGBT, International Rectifier

IR's range of Co-Pack IGBTs combines the high performance IGBT with ultrafast anti-parallel recovery diodes in a single compact surface mount or though hole package. Co-Pack IGBTs are available for hard- and soft-switching applications with switching speeds as high as 150kHz.

Полупроводники / Дискретные компоненты / IGBT транзисторы /
International Rectifier IRG4BC20KDPBF N-channel IGBT Transistor, 16 A 600 V, 3-pin TO-220AB

Технические параметры

Структура
Максимальное напряжение кэ ,В
Максимальный ток кэ при 25 гр. С,A
Напряжение насыщения при номинальном токе, В
2.27
Управляющее напряжение,В
6
Мощность макс.,Вт
Температурный диапазон,С
-55…150
Корпус

Дополнительная информация

Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
IRG4BC20KDPBF Data Sheet