IRG4BC30FPBF, IGBT 600В 31А 5кГц TO220AB
The IRG4BC30FPBF is an Insulated Gate Bipolar Transistor optimized for medium operating frequencies 1 to 5kHz in hard switching, >20kHz in resonant mode. The generation 4 IGBT design provides tighter parameter distribution and higher efficiency than generation 3.
• Optimized for specific application conditions
• Designed to be a drop-in replacement for equivalent industry-standard generation 3 IR IGBTs