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IRG4PC40KPBF, 600В 42А 10кГц ТО247АС

Артикул: IRG4PC40KPBF
Ном. номер: 774425110
Производитель: International Rectifier
IRG4PC40KPBF, 600В 42А 10кГц ТО247АС
Доступно на заказ более 8 шт. Отгрузка со склада в Москве 6 недель.
580 × = 580
от 25 шт. — 300 руб.

Описание

Single IGBT over 21A, International Rectifier
Optimised IGBTs designed for medium frequency applications with fast response and provide the user with the highest efficiency available. Utilising FRED diodes optimised to provide the best performance with IGBT's

IGBT (Insulated-Gate Bipolar Transistor), International Rectifier
International Rectifier offers an extensive IGBT portfolio ranging from 300V to 1200V based on various technologies that minimize switching and conduction losses to increase efficiency, reduce thermal problems and improve power density. The company also offers a broad range of IGBT die designed specifically for medium- to high-power modules. For modules that demand the highest reliability, solderable front metal (SFM) die can be employed to eliminate bond wires allowing dual sided cooling for improved thermal performance, reliability and efficiency.

Single IGBT, International Rectifier

Offering switching speeds up to 150kHz, IR's discrete IGBTs are available for hard- and soft-switching applications. This comprehensive range offers reduced power dissipation and improved power density and includes DPAK, D2PAK, TO-220, TO-247, TO-262 and Super TO-247 package options.

Co-Pack IGBT, International Rectifier

IR's range of Co-Pack IGBTs combines the high performance IGBT with ultrafast anti-parallel recovery diodes in a single compact surface mount or though hole package. Co-Pack IGBTs are available for hard- and soft-switching applications with switching speeds as high as 150kHz.

Полупроводники / Дискретные компоненты / IGBT транзисторы /
International Rectifier IRG4PC40KPBF N-channel IGBT Transistor, 42 A 600 V, 3-pin TO-247AC

Технические параметры

Структура
Максимальное напряжение кэ ,В
Максимальный ток кэ при 25 гр. С,A
Напряжение насыщения при номинальном токе, В
2.2
Управляющее напряжение,В
6
Мощность макс.,Вт
Температурный диапазон,С
-55…150
Дополнительные опции
выдерживает 10мкс кз
Корпус

Техническая документация

IRG4PC40KPBF Datasheet
pdf, 238 КБ

Дополнительная информация

Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
IRG4PC40KPBF Data Sheet