IRG4PC50FDPBF, IGBT 600В 39А 10кГц [TO-247]
The IRG4PC50FDPBF is an insulated gate Bipolar Transistor with ultrafast soft recovery diode, optimized for medium operating frequencies. Generation 4 IGBT design provides tighter parameter distribution and higher efficiency than Generation 3. IGBT co-packaged with HEXFREDTM ultrafast, ultra-soft-recovery anti-parallel diodes for use in bridge configurations.
• ±20V Gate-emitter voltage