IRG4PSC71UDPBF, IGBT+di 600В 85А [Super247]
The IRG4PSC71UDPBF is an Insulated Gate Bipolar Transistor with ultrafast soft recovery diode. The generation 4 IGBT design provides tighter parameter distribution and higher efficiency (minimum switching and conduction losses) than prior generations. The IGBT co-packaged with HEXFRED™ ultrafast, ultra-soft recovery anti-parallel diodes for use in bridge configurations.
• Creepage distance increased to 5.35mm
• High efficiency
• Maximum power density
• Optimized for specific application conditions
• HEXFRED™ diodes optimized for performance with IGBTs