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IRG7PH50UPBF, IGBT 1200В 140А 8-30кГц [TO-247AC]

Артикул: IRG7PH50UPBF
Ном. номер: 9000138521
Производитель: International Rectifier
Фото 1/3 IRG7PH50UPBF, IGBT 1200В 140А 8-30кГц [TO-247AC]
Фото 2/3 IRG7PH50UPBF, IGBT 1200В 140А 8-30кГц [TO-247AC]Фото 3/3 IRG7PH50UPBF, IGBT 1200В 140А 8-30кГц [TO-247AC]
Есть в наличии более 7 шт. Отгрузка со склада в Москве 1-2 рабочих дня.
700 × = 700
от 3 шт. — 660 руб.
от 25 шт. — 600 руб. (5 рабочих дней)
Цена и наличие в магазинах

Описание

Single IGBT over 21A, International Rectifier
Optimised IGBTs designed for medium frequency applications with fast response and provide the user with the highest efficiency available. Utilising FRED diodes optimised to provide the best performance with IGBT's

IGBT (Insulated-Gate Bipolar Transistor), International Rectifier
International Rectifier offers an extensive IGBT portfolio ranging from 300V to 1200V based on various technologies that minimize switching and conduction losses to increase efficiency, reduce thermal problems and improve power density. The company also offers a broad range of IGBT die designed specifically for medium- to high-power modules. For modules that demand the highest reliability, solderable front metal (SFM) die can be employed to eliminate bond wires allowing dual sided cooling for improved thermal performance, reliability and efficiency.

Single IGBT, International Rectifier

Offering switching speeds up to 150kHz, IR's discrete IGBTs are available for hard- and soft-switching applications. This comprehensive range offers reduced power dissipation and improved power density and includes DPAK, D2PAK, TO-220, TO-247, TO-262 and Super TO-247 package options.

Co-Pack IGBT, International Rectifier

IR's range of Co-Pack IGBTs combines the high performance IGBT with ultrafast anti-parallel recovery diodes in a single compact surface mount or though hole package. Co-Pack IGBTs are available for hard- and soft-switching applications with switching speeds as high as 150kHz.

Технические параметры

Структура
Максимальное напряжение кэ ,В
Максимальный ток кэ при 25 гр. С,A
Напряжение насыщения при номинальном токе, В
1.7
Управляющее напряжение,В
6
Мощность макс.,Вт
Крутизна характеристики, S
Температурный диапазон,С
-55…175
Корпус

Дополнительная информация

IRG7PH50UPbF, IRG7PH50U-EP, Insulated Gate Bipolar Transistor (IGBT) IRG7PH50UPBF
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов