IRL6342PBF, MOSFET N-Channel 30V 9.9A

PartNumber: IRL6342PBF
Ном. номер: 8013336890
Производитель: International Rectifier
IRL6342PBF, MOSFET N-Channel 30V 9.9A
Доступно на заказ более 60 шт. Отгрузка со склада в Москве 7 недель.
80 × = 400
Количество товаров должно быть кратно 5 шт.
от 125 шт. — 20 руб.
Есть аналоги

Описание

N-Channel Power MOSFET 8A to 12A, International Rectifier
International Rectifier's range of discrete HEXFET® power MOSFETs includes N-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.

MOSFET Transistors, International Rectifier
International Rectifier's comprehensive portfolio of rugged single- and dual- N-channel and P-channel devices offers fast switching speeds and addresses a wide variety of power requirements in applications ranging from AC-DC and DC-DC power supplies to audio and consumer electronics and from motor control to lighting and home appliances.

Полупроводники / Дискретные компоненты / МОП-транзисторы (MOSFETs) /
International Rectifier IRL6342PBF N-channel MOSFET Transistor, 9.9 A, 30 V, 8-pin SOIC

Технические параметры

разрешение
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
конфигурация
Quad Drain, Triple Source
размеры
5 x 4 x 1.5mm
высота
1.5mm
длина
5mm
Maximum Continuous Drain Current
9.9 A
Maximum Drain Source Resistance
0.019 Ω
Maximum Drain Source Voltage
30 V
Maximum Gate Source Voltage
±12 V
максимальная рабочая температура
+150 °C
Максимальная рассеиваемая мощность
2.5 W
Minimum Operating Temperature
-55 °C
тип монтажа
Surface Mount
Number of Elements per Chip
1
тип упаковки
SOIC
Pin Count
8
Typical Gate Charge @ Vgs
11 nC@ 4.5 V
Typical Input Capacitance @ Vds
1025 pF@ 25 V
Typical Turn-Off Delay Time
33 ns
Typical Turn-On Delay Time
6 ns
ширина
4mm
Maximum Gate Threshold Voltage
1.1V
Minimum Gate Threshold Voltage
0.5V

Техническая документация

IRL6342PBF datasheet
pdf, 267 КБ

Дополнительная информация

IRL6342PbF, HEXFET Power MOSFET