IRLL2705TRPBF, HEXFET N-Ch MOSFET 5.2A 5

PartNumber: IRLL2705TRPBF
Ном. номер: 8074822589
Производитель: International Rectifier
IRLL2705TRPBF, HEXFET N-Ch MOSFET 5.2A 5
Доступно на заказ более 90 шт. Отгрузка со склада в Москве 6 недель.
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от 100 шт. — 31 руб.

Описание

HEXFET® N-Channel Power MOSFET up to 50A, International Rectifier
HEXFET® Power MOSFETs present a variety of rugged single N-channel devices for AC-DC and DC-DC power supplies to audio and consumer electronics, motor control and lighting and home appliances.

MOSFET Transistors, International Rectifier
International Rectifier's comprehensive portfolio of rugged single- and dual- N-channel and P-channel devices offers fast switching speeds and addresses a wide variety of power requirements in applications ranging from AC-DC and DC-DC power supplies to audio and consumer electronics and from motor control to lighting and home appliances.

Полупроводники / Дискретные компоненты / МОП-транзисторы (MOSFETs) /
International Rectifier IRLL2705TRPBF N-channel MOSFET Transistor, 5.2 A, 55 V, 3-pin SOT-223

Технические параметры

разрешение
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
конфигурация
Single
размеры
6.7 x 3.7 x 1.739mm
высота
1.739mm
длина
6.7mm
Maximum Continuous Drain Current
5.2 A
Maximum Drain Source Resistance
0.065 Ω
Maximum Drain Source Voltage
55 V
Maximum Gate Source Voltage
±16 V
максимальная рабочая температура
+150 °C
Максимальная рассеиваемая мощность
2.1 W
Minimum Operating Temperature
-55 °C
тип монтажа
Surface Mount
Number of Elements per Chip
1
тип упаковки
SOT-223
Pin Count
3
Typical Gate Charge @ Vgs
32 nC@ 10 V
Typical Input Capacitance @ Vds
870 pF@ 25 V
Typical Turn-Off Delay Time
35 ns
Typical Turn-On Delay Time
6.2 ns
ширина
3.7mm
Maximum Gate Threshold Voltage
2V
Minimum Gate Threshold Voltage
1V

Дополнительная информация

IRLL2705, HEXFET Power MOSFET