IS61LV25616AL-10TLI, 4Mb,High-Sp/LP,Async,256K

PartNumber: IS61LV25616AL-10TLI
Ном. номер: 8028171184
Производитель: Integrated Silicon Solution
IS61LV25616AL-10TLI, 4Mb,High-Sp/LP,Async,256K
Доступно на заказ более 7 шт. Отгрузка со склада в Москве 7 недель.
670 × = 670

Описание

Static RAM, ISSI
The ISSI Static RAM products use high performing CMOS technology. There is a broad range of static RAMs which include the 5V high-speed asynchronous SRAM, high-speed low power asynchronous SRAM, 5V low power types asynchronous SRAMs, ultra-low power CMOS Static RAM and PowerSaver TM lower power asynchronous SRAMs. The ISSI SRAM devices come in a variety of voltages, memory size and different organisations. They are suitable in applications such as CPU cache memory, embedded processors, hard drive, and switches to industrial electronics.

Power supply: 1.8V/3.3V/5V
Packages available: BGA, SOJ, SOP, sTSOP, TSOP
Configuration choice available: x8 and x16
ECC feature available for High Speed Asynchronous SRAMs

SRAM (Static Random Access Memory)

Полупроводники / Память / SRAM память, ИС /
ISSI IS61LV25616AL-10TLI SRAM Memory, 4Mbit, 3.135 → 3.6 V, 10ns 44-pin TSOP

Технические параметры

Address Bus Width
18Bit
размеры
18.52 x 10.29 x 1.05mm
высота
1.05mm
длина
18.52mm
максимальная рабочая температура
+85 °C
Maximum Random Access Time
10ns
размер памяти
4MBit
Minimum Operating Temperature
-40 °C
тип монтажа
Surface Mount
Number of Bits per Word
16Bit
Number of Words
256K
организационная схема
256K words x 16 bit
тип упаковки
TSOP
Pin Count
44
Timing Type
Asynchronous
ширина
10.29mm
Minimum Operating Supply Voltage
3.135 V
Maximum Operating Supply Voltage
3.6 V
Low Power
Yes

Дополнительная информация

Datasheet