M29W640FB70N6E, Флеш память, блок загрузки, 64 Мбит, 8М x 8бит / 4М x 16бит, CFI, Параллельный, TSOP, 48 вывод(-ов)

PartNumber: M29W640FB70N6E
Ном. номер: 8078457093
Производитель: Micron
M29W640FB70N6E, Флеш память, блок загрузки ...
Доступно на заказ 1017 шт. Отгрузка со склада в Москве 2-4 недели.
2 460 × = 2 460
от 10 шт. — 1 560 руб.
от 100 шт. — 759.90 руб.


The M29W640FB70N6E is a 64MB non-volatile Flash Memory that can be read, erased and reprogrammed. These operations can be performed using a single low voltage 2.7 to 3.6V supply. On power-up the memory defaults to its read mode. The memory is divided into blocks that can be erased independently so it is possible to preserve valid data while old data is erased. Blocks can be protected in units of 256Kb, to prevent accidental program or erase commands from modifying the memory. Program and erase commands are written to the command Interface of the memory. An on-chip program/erase controller simplifies the process of programming or erasing the memory by taking care of all of the special operations that are required to update the memory contents. The end of a program or erase operation can be detected and any error conditions identified. The command set required to control the memory is consistent with JEDEC standards.

• Asynchronous random/page read
• Random access - 70ns
• Programming time - 10µs per byte/word typical
• Program/erase controller - embedded byte/word program algorithms
• Program/erase suspend and resume - read from any block during program suspend
• Read and program another block during erase suspend
• Unlock bypass program command - Faster production/batch programming
• VPP/WP Pin for fast program and write protect
• Temporary block unprotection mode
• Common flash interface - 64-bit security code
• Extended memory block
• Extra block used as security block or to store additional information
• Low power consumption - standby and automatic standby
• 100000 Program/erase cycles per block
• Electronic signature

Полупроводники - Микросхемы\Память
Код: 1224423

Технические параметры

Размер Памяти
Конфигурация Флэш-памяти
8М x 8бит / 4М x 16бит
Тип Интерфейса ИС
CFI, Параллельный
Стиль Корпуса Микросхемы Памяти
Количество Выводов
Время Доступа
Минимальное Напряжение Питания
Максимальное Напряжение Питания
Минимальная Рабочая Температура
Максимальная Рабочая Температура
Линия Продукции
3V Parallel NOR Flash Memories
Тип Памяти
Флэш - Boot Block
Уровень Чувствительности к Влажности (MSL)
MSL 3 - 168 часов

Дополнительная информация

Datasheet M29W640FB70N6E