MGSF2N02ELT1G, Транзистор силовой полевой SOT23-3

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Номенклатурный номер: 8017533096

Артикул: MGSF2N02ELT1G

SOT-23 MOSFETs ROHS

Continuous Drain Current (Id)	6A
Drain Source On Resistance (RDS(on)@Vgs,Id)	31.8mΩ@4.5V, 6A
Drain Source Voltage (Vdss)	20V
Type	N Channel
Case	SOT23
Drain current	2.8A
Drain-source voltage	20V
Gate charge	3.5nC
Gate-source voltage	±8V
Kind of channel	enhanced
Kind of package	reel, tape
Manufacturer	ONSEMI
Mounting	SMD
On-state resistance	85mΩ
Polarisation	unipolar
Power dissipation	1.25W
Type of transistor	N-MOSFET
Channel Mode	Enhancement
Channel Type	N
Maximum Continuous Drain Current	2.8 A
Maximum Drain Source Resistance	115 mΩ
Maximum Drain Source Voltage	20 V
Maximum Gate Source Voltage	-8 V, +8 V
Maximum Gate Threshold Voltage	1V
Maximum Operating Temperature	+150 °C
Maximum Power Dissipation	1.25 W
Minimum Operating Temperature	-55 °C
Mounting Type	Surface Mount
Number of Elements per Chip	1
Package Type	SOT-23
Pin Count	3
Transistor Configuration	Single
Transistor Material	Si
Typical Gate Charge @ Vgs	0.6 nC @ 4 V
Width	1.4mm
Вес, г	0.02