MMDT2907A-7-F, 10nA 60V 200mW 100@150mA,10V 600mA 200MHz 1.6V@500mA,50mA 2PCSPNP -55°C~+150°C@(Tj) SOT-363 BIpolar TransIstors - BJT

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20 руб.

Кратность заказа 10 шт.

от 100 шт. — 12 руб.

Добавить в корзину 10 шт. на сумму 200 руб.

Номенклатурный номер: 8017625904

Артикул: MMDT2907A-7-F

Бренд: DIODES INC.

Brand	Diodes Incorporated
Collector- Base Voltage VCBO	-60 V
Collector- Emitter Voltage VCEO Max	-60 V
Collector-Emitter Saturation Voltage	-1.6 V
Configuration	Dual
Continuous Collector Current	-0.6 A
DC Current Gain HFE Max	300
Emitter- Base Voltage VEBO	-5 V
Factory Pack Quantity	3000
Gain Bandwidth Product FT	200 MHz
Manufacturer	Diodes Incorporated
Maximum DC Collector Current	0.6 A
Maximum Operating Temperature	+150 C
Minimum Operating Temperature	-55 C
Mounting Style	SMD/SMT
Package / Case	SOT-363-6
Packaging	Cut Tape or Reel
Pd - Power Dissipation	200 mW
Product Category	Bipolar Transistors-BJT
Product Type	BJTs-Bipolar Transistors
Series	MMDT29
Subcategory	Transistors
Transistor Polarity	PNP
Brand:	Diodes Incorporated
Collector- Base Voltage VCBO:	60 V
Collector- Emitter Voltage VCEO Max:	60 V
Collector-Emitter Saturation Voltage:	1.6 V
Configuration:	Dual
Continuous Collector Current:	-0.6 A
DC Current Gain hFE Max:	300
Emitter- Base Voltage VEBO:	5 V
Factory Pack Quantity: Factory Pack Quantity:	3000
Gain Bandwidth Product fT:	200 MHz
Manufacturer:	Diodes Incorporated
Maximum DC Collector Current:	600 mA
Maximum Operating Temperature:	+150 C
Minimum Operating Temperature:	-55 C
Mounting Style:	SMD/SMT
Package / Case:	SOT-363-6
Pd - Power Dissipation:	200 mW
Product Category:	Bipolar Transistors-BJT
Product Type:	BJTs-Bipolar Transistors
Series:	MMDT29
Subcategory:	Transistors
Technology:	Si
Transistor Polarity:	PNP
Вес, г	0.02