NDS331N, Транзистор MOSFET N-CH 20V 1.3A [SSOT3]

Артикул: NDS331N
Ном. номер: 9000170439
Производитель: Fairchild Semiconductor
NDS331N, Транзистор MOSFET N-CH 20V 1.3A [SSOT3]
Доступно на заказ более 80 шт. Отгрузка со склада в Москве 6 недель.
62 × = 310
Количество товаров должно быть кратно 5 шт.
от 25 шт. — 33 руб.
от 100 шт. — 11.10 руб.

Описание

Enhancement Mode N-Channel MOSFET, Fairchild Semiconductor
Enhancement Mode Field Effect Transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance, provide rugged and reliable performance and fast switching.

MOSFET Transistors, Fairchild Semiconductor
Fairchild offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
Fairchild MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Полупроводники / Дискретные компоненты / МОП-транзисторы (MOSFETs) /
Fairchild NDS331N N-channel MOSFET Transistor, 1.3 A, 20 V, 3-pin SOT-23

Технические параметры

тип упаковки
SOT-23
Maximum Drain Source Voltage
20 V
максимальная рабочая температура
+150 °C
высота
0.94mm
Maximum Continuous Drain Current
1.3 A
Maximum Drain Source Resistance
0.16 Ω
длина
2.92mm
Channel Mode
Enhancement
конфигурация
Single
размеры
2.92 x 1.4 x 0.94mm
Channel Type
N
Typical Turn-Off Delay Time
10 ns
Typical Input Capacitance @ Vds
162 pF@ 10 V
Typical Gate Charge @ Vgs
3.5 nC@ 4.5 V
Typical Turn-On Delay Time
5 ns
тип монтажа
Surface Mount
Number of Elements per Chip
1
разрешение
Power MOSFET
ширина
1.4mm
Minimum Operating Temperature
-55 °C
Pin Count
3
Minimum Gate Threshold Voltage
0.5V
Maximum Gate Source Voltage
8 V
Максимальная рассеиваемая мощность
0.5 W

Техническая документация

NDS331N
pdf, 164 КБ

Дополнительная информация

Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
Datasheet