NDS352AP, Транзистор P-канал 30В 900мА [SSOT3]

Артикул: NDS352AP
Ном. номер: 9000291292
Производитель: Fairchild Semiconductor
NDS352AP, Транзистор P-канал 30В 900мА [SSOT3]
Доступно на заказ более 80 шт. Отгрузка со склада в Москве 6 недель.
61 × = 610
Количество товаров должно быть кратно 10 шт.
от 50 шт. — 38 руб.
от 100 шт. — 22 руб.

Описание

Enhancement Mode P-Channel MOSFET, Fairchild Semiconductor
Enhancement Mode Field Effect Transistors are produced using Fairchild's proprietary, high cell density, DMOS technology. This very high density process has been designed to minimize on-state resistance, provide rugged and reliable performance and fast switching.

MOSFET Transistors, Fairchild Semiconductor
Fairchild offers a substantial portfolio of MOSFET devices that includes high-voltage (>250V) and low-voltage (<250V) types. The advanced silicon technology provides smaller die sizes, which it is incorporated into multiple industry-standard and thermally-enhanced packages.
Fairchild MOSFETs provide superior design reliability from reduced voltage spikes and overshoot, to lower junction capacitance and reverse recovery charge, to elimination of additional external components to keep systems up and running longer.

Полупроводники / Дискретные компоненты / МОП-транзисторы (MOSFETs) /
Fairchild NDS352AP P-channel MOSFET Transistor, 0.9 A, 30 V, 3-pin SOT-23

Технические параметры

Typical Input Capacitance @ Vds
135 pF@ 15 V
Typical Gate Charge @ Vgs
2 nC@ 4.5 V
Number of Elements per Chip
1
разрешение
Power MOSFET
ширина
1.4mm
Channel Type
P
Maximum Gate Source Voltage
±20 V
Minimum Operating Temperature
-55 °C
Typical Turn-Off Delay Time
35 ns
длина
2.92mm
тип упаковки
SOT-23
Minimum Gate Threshold Voltage
0.8V
Максимальная рассеиваемая мощность
0.5 W
Pin Count
3
Maximum Drain Source Voltage
30 V
Typical Turn-On Delay Time
5 ns, 8 ns
тип монтажа
Surface Mount
размеры
2.92 x 1.4 x 0.94mm
Channel Mode
Enhancement
конфигурация
Single
Maximum Drain Source Resistance
0.3 Ω
Maximum Continuous Drain Current
0.9 A
максимальная рабочая температура
+150 °C
высота
0.94mm

Техническая документация

NDS352AP
pdf, 84 КБ

Дополнительная информация

Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
Trans MOSFET P-CH 30V 0.9A 3- SuperSOT