PBSS4041SPN, Dual Transistor NPN/PNP 6

PartNumber: PBSS4041SPN
Ном. номер: 8000779083
Производитель: NXP Semiconductor
PBSS4041SPN, Dual Transistor NPN/PNP 6
Доступно на заказ более 30 шт. Отгрузка со склада в Москве 7 недель.
130 × = 650
Количество товаров должно быть кратно 5 шт.
от 10 шт. — 82 руб.
от 25 шт. — 56.40 руб.

Описание

Low Saturation Voltage Dual NPN/PNP Transistors, NXP
A range of NXP BISS (Breakthrough In Small Signal) Low Saturation Voltage Dual NPN/PNP Bipolar Junction Transistors. These devices feature very low collector-emitter saturation voltages and high collector current capacities in compact space-saving packages. The reduced losses of these transistors results in lower heat generation and an overall increase in efficiency when used in switching and digital applications.

Bipolar Transistors, NXP Semiconductors

Bipolar Transistors

Полупроводники / Дискретные компоненты / Биполярные транзисторы /
NXP PBSS4041SPN Dual NPN+PNP Low Saturation Bipolar Transistor, 6.7 A, 60 V, 8-Pin SOIC

Технические параметры

Dimensions
5 x 4 x 1.75mm
Maximum Collector Base Voltage
60 V
Maximum Collector Emitter Voltage
60 V
Maximum DC Collector Current
6.7 A
Maximum Emitter Base Voltage
5 V
Maximum Operating Frequency
100 MHz
Maximum Operating Temperature
+150 °C
Максимальная рассеиваемая мощность
2.3 W
Minimum Operating Temperature
-55 °C
Number of Elements per Chip
2
Package Type
SOIC
Pin Count
8
Width
4mm
Maximum Base Emitter Saturation Voltage
-1 (PNP) V, 1.2 (NPN) V
Maximum Collector Emitter Saturation Voltage
350 (NPN) mV, -90 (PNP) mV
Minimum DC Current Gain
75 (NPN), 80 (PNP)
Transistor Type
NPN, PNP
высота
1.75mm
Length
5mm
Mounting Type
Surface Mount

Дополнительная информация

Dual Transistor NPN/PNP 60V 6.7/5.9A SO8 Data ...