SG01L-18, Фотодиод, 3.4фА, 300нм, TO-18-2

The SG01L-18 is a Broadband SiC-based UV Photodiode provides the unique property of extreme radiation hardness, near-perfect visible blindness, low dark current, high speed and low noise. It features make SiC the best available material for visible blind semiconductor UV detectors. The SiC detector can be permanently operated at up to 170°C (338°F). The temperature coefficient of signal (responsivity) is also low, <0.1%/K. Because of the low noise (dark current in the fA range), very low UV radiation intensities can be measured reliably.

• UV broadband (UVA+UVB+UVC), PTB reported high chip stability
• 1.00mm² Detector area
• Hermetically sealed metal housing
• 10µW/cm² Irradiation at 280nm (peak responsivity) results a current of approximately 13nA
• 1 Isolated pin and 1 case pin
• SiC chip with PTB reported high radiation hardness