SG01S-C5, Photo Diode, SiC, UVC, 10 mW/cm2, 275 nm, 720 nA, TO-5-2

SG01S-C5 is a UVC-only SiC-based UV photodiode. This SiC provides the unique property of extreme radiation hardness, near-perfect visible blindness, low dark current, high speed, and low noise. The SiC detector can be permanently operated at up to 170°C (338°F). The temperature coefficient of the signal (responsivity) is also low, < 0.1%/K. Because of the low noise (dark current in the fA range), very low UV radiation intensities can be measured reliably.

• UVC, 0.06mm² detector area
• TO5 hermetically sealed metal housing, 1 isolated pin and 1 case pin
• 10 mW/cm2 irradiation at 275nm (peak responsivity) results a current of approx. 720nA
• SiC chip with PTB reported high radiation hardness
• 275nm wavelength of max. spectral responsivity
• Responsivity range from 225 to 287nm
• 0.06mm² active area, 0.2fA dark current (1V reverse bias), 15pF capacitance
• 720nA short circuit (10µW/cm² at peak), < 0.1 temperature coefficient, 20V reverse voltage
• Operating temperature range from -55 to +170°C