SKM150GB12T4, IGBT Module Half-Bridge 2

PartNumber: SKM150GB12T4
Ном. номер: 8014889159
Производитель: Semikron
SKM150GB12T4, IGBT Module Half-Bridge 2
Доступно на заказ более 1 шт. Отгрузка со склада в Москве 6 недель.
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Описание

IGBT Modules, Semikron
SEMIKRON offers IGBT (Insulated-Gate Bipolar Transistor) modules in SEMITRANS, SEMiX and SEMITOP packages in different topologies, current and voltage ratings.

IGBT Modules, Semikron
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.

Полупроводники / Дискретные компоненты / IGBT модули /
Semikron, SKM150GB12T4, IGBT Halfbridge Module, Dual, 232 A max, 1200 V, 7-pin SEMITRANS®2

Технические параметры

Channel Type
N
конфигурация
Dual
Dimensions
94 x 34 x 30.1mm
Maximum Collector Emitter Voltage
1200 V
Maximum Continuous Collector Current
232 A
Maximum Gate Emitter Voltage
±20V
Maximum Operating Temperature
+175 °C
Minimum Operating Temperature
-40 °C
Package Type
SEMITRANS®2
Pin Count
7
Width
34mm
высота
30.1mm
длина
94mm
тип монтажа
Screw Mount

Дополнительная информация

IGBT halfbridge module 150A 1200V