SPB16N50C3, MOSFET N-Channel 500V 16A

PartNumber: SPB16N50C3
Ном. номер: 8083478953
Производитель: Infineon Technologies
SPB16N50C3, MOSFET N-Channel 500V 16A
Доступно на заказ более 10 шт. Отгрузка со склада в Москве 6 недель.
420 × = 420
от 10 шт. — 210 руб.
от 20 шт. — 155.50 руб.

Описание

Infineon CoolMOS™ Power MOSFET Family

This Range of MOSFET Transistors by Infineon combines all benefits of fast switching Superjunction MOSFETs with the ease of use. Such as low area specific on-state resistance and reduced energy stored in output capacitance, the 500V CoolMOS™ CE series provides a high body diode ruggedness, achieves extremely low conduction and switching losses and can make switching applications more efficient, more compact, lighter and cooler.

Reduced energy stored in output capacitance
High body diode ruggedness (E oss)
Reduced reverse recovery charge (Q rr)
Reduced gate charge (Q g)
Easy control of switching behaviour

MOSFET Transistors, Infineon
Infineon's large and comprehensive portfolio of MOSFET devices includes the OptiMOS™ and CoolMOS™ families. These products deliver best-in-class performance from the latest generation of state-of-the-art power MOSFETs

Полупроводники / Дискретные компоненты / МОП-транзисторы (MOSFETs) /
Infineon SPB16N50C3 N-channel MOSFET Transistor, 16 A, 560 V, 3-pin TO-263

Технические параметры

разрешение
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
размеры
10.31 x 9.45 x 4.57mm
высота
4.57mm
длина
10.31mm
Maximum Continuous Drain Current
16 A
Maximum Drain Source Resistance
0.28 Ω
Maximum Drain Source Voltage
560 V
Maximum Gate Source Voltage
±20 V
максимальная рабочая температура
+150 °C
Максимальная рассеиваемая мощность
160 W
Minimum Operating Temperature
-55 °C
тип монтажа
Surface Mount
Number of Elements per Chip
1
тип упаковки
TO-263
Pin Count
3
Typical Gate Charge @ Vgs
66 nC@ 10 V
Typical Input Capacitance @ Vds
1600 pF@ 25 V
Typical Turn-Off Delay Time
50 ns
Typical Turn-On Delay Time
10 ns
ширина
9.45mm
Maximum Gate Threshold Voltage
3.9V
Minimum Gate Threshold Voltage
2.1V

Дополнительная информация

SPB16N50C3, CoolMOS Power Transistor