STF21NM60ND, Транзистор, FDmesh II, N-канал, 600 В, 0.17 Ом, 17А [TO-220FP]
The STF21NM60ND is a FDmesh™ II N-channel Power MOSFET features low input capacitance and gate charge. This FDmesh™ II Power MOSFET with intrinsic fast-recovery body diode is produced using the second generation of MDmesh™ technology. Utilizing a new strip-layout vertical structure, this revolutionary device features extremely low ON-resistance and superior switching performance. It is ideal for bridge topologies and ZVS phase-shift converters.
• Worldwide best RDS (ON) area amongst the fast recovery diode devices
• 100% Avalanche tested
• Low gate input resistance
• Extremely high dV/dt and avalanche capabilities