STF21NM60ND
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1 шт. со склада г.Москва, срок 10-11 дней
710 руб.
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Описание
Электроэлемент
MOSFET, N CH, 600V, 17A, TO 220FP; Transistor Polarity:N Channel; Continuous Drain Current Id:17A; Drain Source Voltage Vds:600V; On Resistance Rds(on):0.17ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs:4V; Power Dissipation Pd:30W; Transistor Case Style:TO-220FP; No. of Pins:3Pins; Operating Temperature Max:150°C; Product Range:-; Automotive Qualification Standard:-; MSL:-; SVHC:No SVHC (17-Dec-2015); Operating Temperature Min:-55°C; Operating Temperature Range:-55°C to +150°C
Технические параметры
| Base Part Number | STF21 |
| Current - Continuous Drain (Id) @ 25В°C | 17A(Tc) |
| Drain to Source Voltage (Vdss) | 600V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| FET Type | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 60nC @ 10V |
| Input Capacitance (Ciss) (Max) @ Vds | 1800pF @ 50V |
| Manufacturer | STMicroelectronics |
| Mounting Type | Through Hole |
| Operating Temperature | 150В°C(TJ) |
| Package / Case | TO-220-3 Full Pack |
| Packaging | Tube |
| Part Status | Obsolete |
| Power Dissipation (Max) | 30W(Tc) |
| Rds On (Max) @ Id, Vgs | 220mOhm @ 8.5A, 10V |
| Series | FDmeshв(ў II |
| Supplier Device Package | TO-220FP |
| Technology | MOSFET(Metal Oxide) |
| Vgs (Max) | В±25V |
| Vgs(th) (Max) @ Id | 5V @ 250ВµA |
| Base Product Number | STF21 -> |
| ECCN | EAR99 |
| HTSUS | 8541.29.0095 |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) |
| Other Related Documents | http://www.st.com/web/catalog/sense_power/FM100/CL |
| Package | Tube |
| REACH Status | REACH Unaffected |
| RoHS Status | ROHS3 Compliant |
| Channel Mode | Enhancement |
| Channel Type | N |
| Maximum Continuous Drain Current | 17 A |
| Maximum Drain Source Resistance | 220 mΩ |
| Maximum Drain Source Voltage | 600 V |
| Maximum Gate Source Voltage | -25 V, +25 V |
| Maximum Gate Threshold Voltage | 5V |
| Maximum Operating Temperature | +150 °C |
| Maximum Power Dissipation | 30 W |
| Minimum Gate Threshold Voltage | 3V |
| Number of Elements per Chip | 1 |
| Package Type | TO-220FP |
| Pin Count | 3 |
| Transistor Configuration | Single |
| Transistor Material | Si |
| Typical Gate Charge @ Vgs | 60 nC @ 10 V |
| Width | 4.6mm |
| Вес, г | 2 |
Техническая документация
Дополнительная информация
Калькуляторы группы «Транзисторы полевые (FETs, MOSFETs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
Сроки доставки
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