STGD3NB60SDT4, Биполярный транзистор IGBT, 600 В, 3 А, 48 Вт
Изображения служат только для ознакомления,
см. техническую документацию
см. техническую документацию
93 шт. со склада г.Москва, срок 12 дней
260 руб.
Мин. кол-во для заказа 2 шт.
от 11 шт. —
210 руб.
от 22 шт. —
194 руб.
от 44 шт. —
185 руб.
Добавить в корзину 2 шт.
на сумму 520 руб.
Альтернативные предложения2
Описание
Транзисторы / IGBT (БТИЗ) транзисторы / Одиночные IGBT транзисторы
Биполярный транзистор IGBT, 600 В, 3 А, 48 Вт
Технические параметры
| Корпус | dpak | |
| Base Product Number | STGD3 -> | |
| Current - Collector (Ic) (Max) | 6A | |
| Current - Collector Pulsed (Icm) | 25A | |
| ECCN | EAR99 | |
| Gate Charge | 18nC | |
| HTSUS | 8541.29.0095 | |
| Input Type | Standard | |
| Moisture Sensitivity Level (MSL) | 1 (Unlimited) | |
| Mounting Type | Surface Mount | |
| Operating Temperature | 175В°C (TJ) | |
| Other Related Documents | http://www.st.com/web/catalog/sense_power/FM100/CL | |
| Package | Tape & Reel (TR)Cut Tape (CT)Digi-ReelВ® | |
| Package / Case | TO-252-3, DPak (2 Leads + Tab), SC-63 | |
| Power - Max | 48W | |
| REACH Status | REACH Unaffected | |
| Reverse Recovery Time (trr) | 1.7Вµs | |
| RoHS Status | ROHS3 Compliant | |
| Series | PowerMESHв„ў -> | |
| Supplier Device Package | DPAK | |
| Switching Energy | 1.15mJ (off) | |
| Td (on/off) @ 25В°C | 125Вµs/- | |
| Test Condition | 480V, 3A, 1kOhm, 15V | |
| Vce(on) (Max) @ Vge, Ic | 1.5V @ 15V, 3A | |
| Voltage - Collector Emitter Breakdown (Max) | 600V | |
| Brand | STMicroelectronics | |
| Collector- Emitter Voltage VCEO Max | 600 V | |
| Collector-Emitter Saturation Voltage | 1.5 V | |
| Configuration | Single | |
| Continuous Collector Current | 3 A | |
| Continuous Collector Current at 25 C | 6 A | |
| Continuous Collector Current Ic Max | 6 A | |
| Factory Pack Quantity | 2500 | |
| Gate-Emitter Leakage Current | +/-100 nA | |
| Height | 2.4 mm | |
| Length | 6.6 mm | |
| Manufacturer | STMicroelectronics | |
| Maximum Gate Emitter Voltage | +/-20 V | |
| Maximum Operating Temperature | +150 C | |
| Minimum Operating Temperature | -65 C | |
| Mounting Style | SMD/SMT | |
| Packaging | Reel | |
| Pd - Power Dissipation | 48 W | |
| Product Category | IGBT Transistors | |
| RoHS | Details | |
| Unit Weight | 0.139332 oz | |
| Width | 6.2 mm | |
| Brand: | STMicroelectronics | |
| Collector- Emitter Voltage VCEO Max: | 600 V | |
| Collector-Emitter Saturation Voltage: | 1.5 V | |
| Configuration: | Single | |
| Continuous Collector Current at 25 C: | 6 A | |
| Continuous Collector Current Ic Max: | 6 A | |
| Continuous Collector Current: | 3 A | |
| Factory Pack Quantity: Factory Pack Quantity: | 2500 | |
| Gate-Emitter Leakage Current: | +/-100 nA | |
| Manufacturer: | STMicroelectronics | |
| Maximum Gate Emitter Voltage: | -20 V, 20 V | |
| Maximum Operating Temperature: | +150 C | |
| Minimum Operating Temperature: | -65 C | |
| Mounting Style: | SMD/SMT | |
| Package/Case: | TO-252-3 | |
| Pd - Power Dissipation: | 48 W | |
| Product Category: | IGBT Transistors | |
| Product Type: | IGBT Transistors | |
| Qualification: | AEC-Q101 | |
| REACH - SVHC: | Details | |
| Series: | STGD3NB60SD | |
| Subcategory: | IGBTs | |
| Technology: | Si | |
| Вес, г | 0.6 |
Техническая документация
Datasheet
pdf, 308 КБ
Datasheet STGD3NB60SDT4
pdf, 307 КБ
Дополнительная информация
Калькуляторы группы «Транзисторы биполярные с изолированным затвором (IGBTs)»
Типы корпусов импортных транзисторов и тиристоров
Типы корпусов отечественных транзисторов
Сроки доставки
Выберите регион, чтобы увидеть способы получения товара.
