STGD5NB120SZT4, БТИЗ транзистор, 10 А, 1.2 кВ, 75 Вт, 1.2 кВ, TO-252, 3 вывод(-ов)
The STGD5NB120SZT4 is a 1200V Low Drop Internally Clamped IGBT that utilizes the advanced Power MESH™ process resulting in an excellent trade-off between switching performance and low on-state behaviour. The IGBT is ideal for use in inrush current limitation and pre-heating for electronic lamp ballast. Improved switch-off energy spread versus increasing temperature result in reduced switching losses.
• Low on-voltage drop
• High current capability
• Off losses include tail current
• High voltage clamping, low VCE (sat) for reduced conduction losses
• Tight parameter distribution for design simplification and easy paralleling
Полупроводники - Дискретные\Транзисторы\БТИЗ Одиночные