STQ1HNK60R-AP, Силовой МОП-транзистор, N Канал, 400 мА, 600 В, 8 Ом, 10 В, 3 В
The STQ1HNK60R-AP is a SuperMESH™ N-channel Power MOSFET features minimized gate charge. The SuperMESH™ is obtained through an extreme optimization of ST's well established strip-based PowerMESH™ layout. In addition to pushing ON-resistance significantly down, special care is taken to ensure a very good dV/dt capability for the most demanding applications. This MOSFET complements ST full range of high voltage Power MOSFETs including revolutionary MDmesh™ products.
• Extremely high dV/dt capability
• Improved ESD capability
• New high voltage benchmark
Полупроводники - Дискретные\Транзисторы\МОП-транзисторы