STW26NM60N, Транзистор, MDmesh II, N-канал, 600В, 0.135Ом, 20А [TO-247]
The STW26NM60N is a 600V N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company's strip layout to yield one of the world's lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. Improved gate charge and lower power dissipation to meet today's challenging efficiency requirements.
• 100% Avalanche tested
• Low input capacitance and gate charge
• Low gate input resistance